PART |
Description |
Maker |
EDI8L24128C12BC EDI8L24128C15BC EDI8L24128C12BI ED |
128Kx24 Asynchronous SRAM, 5V
|
WEDC[White Electronic Designs Corporation]
|
RD28F3204W30B70 GT28F640W30T85 |
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
|
Intel Corporation
|
AT45DB021B AT45DB021B-CC AT45DB021B-CI AT45DB021B- |
From old datasheet system 2M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers 2-megabit 2.7-volt Only DataFlash??
|
ATMEL[ATMEL Corporation]
|
AT45DB321B AT45DB321B-CC AT45DB321B-CI AT45DB321B- |
From old datasheet system 32M bit, 2.7-Volt Only Serial Interface Flash with two 528-Byte SRAM Buffers 32-megabit 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation]
|
AS5LC512K8DJ-12L_883C AS5LC512K8DJ-12L_IT AS5LC512 |
512K x 8 SRAM 3.3 VOLT HIGH SPEED SRAM with CENTER POWER PINOUT
|
Austin Semiconductor
|
M65608E |
5-Volt Very Low Power CMOS SRAM
|
ATMEL Corporation
|
AM49DL320BGT851 AM49DL320BGT85IS AM49DL320BGT85IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
|
AMD[Advanced Micro Devices] SPANSION[SPANSION]
|
AM42DL640AG45IT AM42DL640AG25IT AM42DL640AG |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
|
SPANSION http://
|
HM624100H HM624100HJP-10 HM624100HJP-12 HM624100HJ |
4M High Speed SRAM (1-Mword x 4-bit) 4分高速SRAM1 - Mword × 4位) SMT CAPACITOR - 0.1 UF, 50 VOLT, 20%
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|